Open Air Plasma Deposition System and Method

ABSTRACT

An apparatus may comprise a plasma deposition unit, a movement system, and a mesh system. The plasma deposition unit may be configured to generate a plasma. The movement system may be configured to move a substrate under the plasma deposition unit. The mesh system may be located between the plasma deposition unit and the substrate in which a mesh may comprise a number of materials for deposition onto the substrate and in which the plasma passing through the mesh may cause a portion of the number of materials from the mesh to be deposited onto the substrate.

BACKGROUND INFORMATION

1. Field

The present disclosure relates generally to fabricating devices and, inparticular, to depositing materials onto substrates.

2. Background

In the deposition of layers of material to form thin films and/orcoatings for the manufacturing of durable and multifunctional layers, alayer of material may be deposited on a substrate as part of theprocess. Thin film deposition may be relevant to the manufacturing ofdevices. These devices may include, for example, without limitation,semiconductor circuits and computer displays. These thin films may be apart of the electronic operational functions of the device or may beused as protection layers for erosion and/or abrasion.

A layer of material also may be deposited in forming optical coatings onoptics. These optical coatings may offer, for example, withoutlimitation, anti-reflective and/or anti-icing properties.

The deposition of materials onto substrates may be performed in a numberof different ways. For example, the materials may be deposited usingphysical vapor deposition, chemical vapor deposition, electrochemicaldeposition, molecular beam epitaxy, and other types of deposition.

Some forms of deposition may use plasma. For example, chemical vapordeposition may be implemented using plasma. This type of deposition maybe referred to as plasma-enhanced chemical vapor deposition, plasmavapor deposition, atmospheric plasma deposition, and/or open air plasmadeposition.

When using plasma to deposit a layer of material, the deposition ofmaterial onto the substrate may occur in vacuum and/or atmosphericconditions. Substrates may be coated with various materials, such as,for example, without limitation, oxides, metals, polymers, and othersuitable types of materials.

Typically, plasma deposition systems have been developed using vacuumconditions. However, using plasma deposition under vacuum conditions mayrequire additional bulky, expensive equipment and complexity to obtainthe appropriate vacuum conditions for depositing materials onto thesubstrate.

Interest in atmospheric deposition systems may rely on costeffectiveness and the versatility of this type of deposition technique.These systems may be designed in mobile modular structures for use infield-related applications outside of a laboratory or plant.

Atmospheric deposition systems may also be referred to as open-airdeposition systems. With atmospheric conditions, bulky and costly vacuumpumps and other equipment for providing vacuum environments may beavoided.

These types of deposition systems, however, still may not provide asmuch throughput as desired for processing substrates. Also, thesesystems may not provide as much control as desired in depositingmaterial onto a substrate.

Therefore, it would be advantageous to have a method and apparatus thattakes into account at least some of the issues discussed above, as wellas possibly other issues.

SUMMARY

In one advantageous embodiment, an apparatus may comprise a plasmadeposition unit, a movement system, and a mesh system. The plasmadeposition unit may be configured to generate a plasma. The movementsystem may be configured to move a substrate under the plasma depositionunit. The mesh system may be located between the plasma deposition unitand the substrate in which a mesh may comprise a number of materials fordeposition onto the substrate and in which the plasma passing throughthe mesh may cause a portion of the number of materials from the mesh tobe deposited onto the substrate.

In another advantageous embodiment, a method for depositing materialsmay be present. A plasma may be directed from a plasma deposition unitthrough a mesh system located between the plasma deposition unit and asubstrate in which a mesh may be comprised of a number of materials. Theplasma may cause a portion of the number of materials from the mesh tobe deposited onto the substrate. The substrate may be moved relative tothe plasma. The number of materials may be deposited onto the substrate.

In still another advantageous embodiment, an atmospheric plasmadeposition system may comprise a plasma deposition unit, a movementsystem, a mesh system, and a controller. The plasma deposition unit mayhave a number of nozzles configured to generate a plasma. The movementsystem may be configured to move a substrate under the plasma depositionunit in which the substrate may be selected from one of a flexiblematerial and a semiconductor substrate. The mesh system may have anumber of meshes located between the plasma deposition unit and thesubstrate in which a mesh in the number of meshes may be associated withthe number of nozzles. The number of meshes may comprise a number ofmaterials for deposition onto the substrate. The plasma passing throughthe mesh may cause a portion of the number of materials from the mesh tobe deposited onto the substrate. The number of materials may bedeposited in a configuration selected from sections and a gradient inwhich an amount of a material in the number of materials depositedvaries. The number of materials may be selected from at least one ofconductive polymers, non-conductive polymers, semi-conductive polymers,metals, metal alloys, dielectrics, carbon, graphites, oxides, aluminum,aluminum oxide, zinc oxide, aluminum copper, aluminum doped zinc oxide,gallium doped zinc oxide, paint, and highly-oriented pyrolytic graphite.The controller may be configured to control operation of the plasmadeposition unit, the movement system, and a number of parameters fordepositing the number of materials onto the substrate. The number ofparameters may comprise at least one of an amount of the number ofmaterials, a type of material for the number of materials, a pattern ofthe number of materials, and an area in which the number of materialsmay be deposited onto a surface of the substrate.

In yet another advantageous embodiment, a method for plasma depositionof materials on a substrate may be present. A number of meshes for amesh system may be selected for a number of nozzles in a plasmadeposition unit based on a desired configuration for a number ofmaterials to be deposited onto the substrate in which the number ofmaterials may be selected from at least one of conductive polymers,non-conductive polymers, semi-conductive polymers, metals, metal alloys,dielectrics, carbon, graphites, oxides, aluminum, aluminum oxide, zincoxide, aluminum copper, aluminum doped zinc oxide, gallium doped zincoxide, paint, and highly-oriented pyrolytic graphite. The substrate maybe selected from one of a flexible substrate and an inflexiblesubstrate. A plasma from the number of nozzles in the plasma depositionunit may be directed through the number of meshes in the mesh system inwhich the number of meshes may be located between the plasma depositionunit and the substrate in which a mesh may be comprised of the number ofmaterials and the plasma may cause a portion of the number of materialsfrom the mesh to be deposited onto the substrate. The substrate may bemoved relative to the plasma while the number of materials is depositedonto the substrate.

The features, functions, and advantages may be achieved independently invarious embodiments of the present disclosure or may be combined in yetother embodiments in which further details can be seen with reference tothe following description and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The novel features believed characteristic of the advantageousembodiments are set forth in the appended claims. The advantageousembodiments, however, as well as a preferred mode of use, furtherobjectives, and advantages thereof will best be understood by referenceto the following detailed description of an advantageous embodiment ofthe present disclosure when read in conjunction with the accompanyingdrawings, wherein:

FIG. 1 is an illustration of a manufacturing environment in accordancewith an advantageous embodiment;

FIG. 2 is an illustration of a plasma deposition system in accordancewith an advantageous embodiment;

FIG. 3 is an illustration of a plasma deposition system in accordancewith an advantageous embodiment;

FIG. 4 is another illustration of a plasma deposition system inaccordance with an advantageous embodiment;

FIG. 5 is an illustration of a nozzle with a mesh in accordance with anadvantageous embodiment;

FIG. 6 is an illustration of a type of mesh in accordance with anadvantageous embodiment;

FIG. 7 is an illustration of a type of mesh in accordance with anadvantageous embodiment;

FIG. 8 is an illustration of a type of mesh in accordance with anadvantageous embodiment;

FIG. 9 is an illustration of a type of mesh in accordance with anadvantageous embodiment;

FIG. 10 is an illustration of a flowchart of a process for depositing anumber of materials on a substrate in accordance with an advantageousembodiment;

FIG. 11 is an illustration of a flowchart of a process for selectingmeshes for a mesh system in accordance with an advantageous embodiment;

FIG. 12 is an illustration of a flowchart of a process for forming amesh in accordance with an advantageous embodiment;

FIG. 13 is an illustration of a substrate with a gradient in accordancewith an advantageous embodiment;

FIG. 14 is an illustration of a substrate with sections of materials inaccordance with an advantageous embodiment;

FIG. 15 is an illustration of an aircraft manufacturing and servicemethod in accordance with an advantageous embodiment; and

FIG. 16 is an illustration of an aircraft in which an advantageousembodiment may be implemented.

DETAILED DESCRIPTION

The different advantageous embodiments recognize and take into accountone or more considerations. For example, the advantageous embodimentsrecognize and take into account that currently available plasmadeposition systems may not provide as much control in depositingmaterials onto a substrate as desired.

For example, the different advantageous embodiments recognize and takeinto account that in some cases, a gradient may be desired with respectto the concentration of a material being deposited onto a substrate. Forexample, it may be desirable to deposit zinc oxide on one portion of thesubstrate, zinc oxide plus aluminum at about five percent in anotherportion of the substrate, and zinc oxide plus aluminum at about 10percent in yet another portion of the substrate.

The different advantageous embodiments recognize and take into accountthat this type of control may not be currently present for atmosphericplasma deposition units. Further, the different advantageous embodimentsrecognize and take into account that currently used plasma and vapordeposition systems may not allow for depositing different types ofmaterials on different portions of the substrate.

Thus, the advantageous embodiments provide a method and apparatus fordepositing material onto a substrate. In one advantageous embodiment, anapparatus may comprise a plasma deposition unit, a movement system, anda mesh system. The atmospheric plasma deposition unit may be configuredto generate a plasma. The movement system may be configured to move thesubstrate under the atmospheric plasma deposition unit. The mesh systemmay be located between the plasma deposition unit and the substrate. Themesh may comprise a number of materials for deposition onto thesubstrate. Plasma passing through the mesh may cause a portion of thenumber of materials from the mesh to be desorbed, activated, and/ordeposited onto the surface of the substrate. Plasma desorption andfurther molecular activation or ionization may refer to the interactionof plasma species, such as ions or neutral atoms, with a solid or liquidtarget surface. The collision of plasma species with the target materialmay physically or chemically desorb sub-atomic, atomic, or molecularstructures from the target material. In parallel and/or series,activation may refer to the sub-atomic, atomic, or molecular change ofthe target material as a result of the collision with plasma species. Inplasma treatment, these collisions may be used to activate the surfacein order to improve adhesion properties of the surface. In plasmadesorption, these collisions may be used to free sub-atomic, atomic,and/or molecular species from the target and turn these species intofree species in the gas phase. Subsequently, these species may bedeposited through physical or chemical adsorption onto a surface forminga film.

With reference now to the figures and, in particular, with reference nowto FIG. 1, an illustration of a manufacturing environment is depicted inaccordance with an advantageous embodiment. In this illustrativeexample, manufacturing environment 100 may comprise plasma depositionsystem 102. Plasma deposition system 102 may be configured to depositnumber of materials 104 onto surface 106 of substrate 108.

Number of materials 104 may be selected from at least one of, forexample, without limitation, conductive polymers, non-conductivepolymers, semi-conductive polymers, metals, metal alloys, dielectrics,carbon, graphites, oxides, aluminum, aluminum oxide, zinc oxide,aluminum copper, aluminum doped zinc oxide, gallium doped zinc oxide,paint, highly-oriented pyrolytic graphite, and other suitable materials.Of course, other materials may be used in addition to or in place of theones described herein.

As used herein, the phrase “at least one of”, when used with a list ofitems, means different combinations of one or more of the listed itemsmay be used and only one of each item in the list may be needed. Forexample, “at least one of item A, item B, and item C” may include, forexample, without limitation, item A, or item A and item B. This examplealso may include item A, item B, and item C, or item B and item C. Also,as used herein with reference to items, a “number of items” is one ormore items. For example, “number of materials 104” is one or morematerials.

In these illustrative examples, plasma deposition system 102 maycomprise plasma deposition unit 110, movement system 112, materialsupply system 114, and controller 116.

Plasma deposition unit 110 may generate plasma 122. Plasma depositionunit 110 may be selected from one of atmospheric plasma deposition unit118 and vacuum plasma deposition unit 120. When plasma deposition unit110 is vacuum deposition unit 120, vacuum system 121 also may bepresent.

Movement system 112 may be configured to move substrate 108 relative toplasma deposition unit 110. Material supply system 114 may be configuredto supply number of materials 104 for deposition onto surface 106 ofsubstrate 108. Controller 116 may be configured to control the operationof other components in plasma deposition system 102 in depositing numberof materials 104 onto surface 106 of substrate 108 to form layer 123.For example, controller 116 may be configured to control the depositionof layer 123 of number of materials 104 onto substrate 108.

For example, controller 116 may be configured to control number ofparameters 190 for depositing number of materials 104 onto substrate108. Number of parameters 190 may comprise at least one of amount 191 ofnumber of materials 104, type of material 192 for number of materials104, pattern 193 of number of materials 104, and area 194 in whichnumber of materials 104 may be deposited onto surface 106 of substrate108. Of course, controller 116 may be configured to control any othersuitable parameters in depositing number of materials 104 onto surface106 of substrate 108.

In these illustrative examples, controller 116 may comprise hardware andalso may include software. Controller 116 may be implemented usingcomputer system 140. Computer system 140 may be one or more computers.If computer system 140 is comprised of more than one computer, thosecomputers may be in communication with each other.

In these illustrative examples, material supply system 114 may beconfigured to supply number of materials 104. Material supply system 114may comprise at least one of mesh system 124, gas source 126, liquidsource 144, and other suitable sources of number of materials 104.

As depicted, mesh system 124, gas source 126, and liquid source 144 mayeach be a different type of material in number of materials 104.Further, mesh system 124 may be comprised of multiple materials innumber of materials 104. Number of materials 104 may form mesh system124 or may coat structures in mesh system 124.

Gas source 126, liquid source 144, or both may use precursors in theform of a liquid or gas in combination with mesh system 124. In otherwords, gas source 126 may have gas precursor 170, and liquid source 144may have liquid precursor 172. The flow of these materials may becontrolled to deposit doped materials with variable or non-variablechemical composition. With mesh system 124, number of meshes 138 may bereplaced when number of materials 104 erode from use of number of meshes138. This replacement of number of meshes 138 may occur in between usesof plasma deposition unit 110 to deposit number of materials 104 ontosurface 106 of substrate 108. Some or all of number of meshes 138 may bereplaced depending on which of number meshes have depleted number ofmaterials 104.

Flow 171 of gas precursor 170 and/or liquid precursor 172 from gassource 126 and/or liquid source 144 may be controlled by flow controller174. Flow controller 174 may be any device and/or system that isconfigured to control a pressure, flow rate, and other parameters withrespect to the movement of gas precursor 170 and/or liquid precursor 172into plasma 122.

For example, gas precursor 170 and/or liquid precursor 172 may bedelivered by flow controller 174 at flow rates and/or pressures selectedto obtain a desired final composition of layer 123.

Gas precursor 170 and/or liquid precursor 172 also may be used to formmulti-layered structure 176 of a number of materials that are formedwith gas precursor 170, liquid precursor 172, and number of materials104 in mesh system 124, or some combination thereof. In one illustrativeexample, gas precursor 170 and/or liquid precursor 172 may be used toform adhesive films to enhance film performance. Number of materials 104in mesh system 124 may be used to form transparent conductive layers.Then, liquid precursor 172 may be used to form the erosion and abrasionresistant layers on top as a protection barrier for multi-layeredstructure 176.

Plasma deposition unit 110 may have source 127 and number of nozzles128. Source 127 may be any device configured to generate plasma 122. Forexample, source 127 may be implemented with any currently used plasmageneration device. Plasma generation devices that may be used in source127 include, for example, without limitation, glow discharge,capacitively coupled plasma, inductively coupled plasma, wave heatedplasma, arc discharge, corona discharge, and capacitive dischargesystems.

Number of nozzles 128 may direct plasma 122 from source 127 towardsubstrate 108. When number of materials 104 is present in plasma 122,number of materials 104 may be deposited onto substrate 108.

In these illustrative examples, movement system 112 may move substrate108 relative to number of nozzles 128 in plasma deposition unit 110while plasma 122 is generated. The movement of substrate 108 relative tonumber of nozzles 128 may result in number of materials 104 beingdeposited in desired area 146 on surface 106 of substrate 108. In theseillustrative examples, substrate 108 may move past number of nozzles128.

In these illustrative examples, movement system 112 may take a number ofdifferent forms. For example, movement system 112 may be comprised of atleast one of roll to roll system 130, conveyor system 132, and othersuitable movement systems configured to move substrate 108. Whenmovement system 112 takes the form of roll to roll system 130, substrate108 may be flexible substrate 134. Flexible substrate 134 may be, forexample, without limitation, polyimide, transparent polyester, polyetherether ketone, polyethylene terephthalate, and other suitable substrates.

When conveyor system 132 is used to implement movement system 112,substrate 108 may take the form of inflexible substrate 136, such as asemiconductor wafer, an aircraft part, or an automobile part.

Mesh system 124 may be located between plasma deposition unit 110 andsubstrate 108. As a result, plasma 122 may pass through mesh system 124.Plasma 122 may pass through mesh system 124 in a manner such that aportion of number of materials 104 from mesh system 124 is carried inplasma 122 for deposition onto surface 106 of substrate 108.

As depicted, mesh system 124 may comprise number of meshes 138. Eachmesh in number of meshes 138 may be located between a nozzle in numberof nozzles 128 and substrate 108. In other illustrative examples, numberof meshes 138 may be a single mesh located between number of nozzles 128and substrate 108.

Number of meshes 138 may be comprised of number of types of meshes 148.As a result, one mesh in number of meshes 138 may be a different type ofmesh as compared to another mesh in number of meshes 138. In theseillustrative examples, when different types of material are present innumber of meshes 138, different materials in number of materials 104 maybe deposited onto different parts of substrate 108.

Mesh pattern 150 and type of material 152 may be selected for each typeof mesh in number of types of meshes 148. Mesh pattern 150 and type ofmaterial 152 may be the same or different for each type of mesh innumber of types of meshes 148 in number of meshes 138, depending on theparticular implementation. Mesh pattern 150 may be, for example, withoutlimitation, a zigzag pattern, a rectangular pattern, a circular pattern,a fractal pattern, or some other suitable configuration.

In these illustrative examples, number of meshes 138 may be selected toprovide desired configuration 168 for number of materials 104 whennumber of materials 104 is deposited onto substrate 108. The selectionof materials for number of materials 104 may be any material of interestthat is to be deposited onto substrate 108. In particular, desiredconfiguration 168 may be, for example, without limitation, at least oneof gradient 162 in which an amount of a material in number of materials104 deposited varies, sections 173, and other suitable configurations.

For example, number of materials 104 in mesh system 124 may comprise aplurality of types of materials 151 in which a portion of each type ofmaterial may be deposited onto a number of areas in a plurality of areas153 on surface 106 of substrate 108. In other words, a material innumber of materials 104 may be a type of material for number ofmaterials 104.

For example, first material 154 and second material 156 may be differenttypes of materials in a plurality of types of materials 151. As aresult, a portion of first material 154 in mesh system 124 may bedeposited onto surface 106 of substrate 108, while a portion of secondmaterial 156 may also be deposited onto a different portion of surface106 of substrate 108. In particular, the portion of first material 154may be deposited onto first area 158 on surface 106 of substrate 108.The portion of second material 156 may be deposited onto second area 160of surface 106 of substrate 108.

In some illustrative examples, first area 158 and second area 160 mayoverlap. In this manner, mesh system 124 may be used with plasmadeposition unit 110 to create gradient 162 in depositing number ofmaterials 104 onto surface 106 to form layer 123 of number of materials104. With this implementation, different meshes in number of meshes 138may have different concentrations of number of materials 104.

Another example of desired configuration 168 may include depositingmultiple materials onto two or more areas. For example, a portion offirst material 154 and a portion of second material 156 may be depositedonto second area 160. Alternatively, at least one of first material 154,second material 156, third material 188, and fourth material 189 may bedeposited onto first area 158. A different combination of at least oneof first material 154, second material 156, third material 188, andfourth material 189 may be deposited onto second area 160. Of course,any number and/or combination of materials may be deposited in anynumber and/or combination of areas depending on the particularimplementation.

Thus, with plasma deposition system 102, greater control in depositingmaterials onto a substrate may be performed. In particular, with plasmadeposition system 102, more than one material may be deposited ontosubstrate 108 in number of materials 104. As a result, plasma depositionsystem 102 may provide greater control in depositing more than onematerial onto substrate 108.

With an advantageous embodiment, substrate 108 may be processed to formdifferent types of items. For example, substrate 108 may be processed toform an organic light-emitting diode display, an integrated circuit, aprocessor, a display device, a sensor, a solar cell, an aircraft windowor windshield, an automobile window or windshield, a medical device, abiomedical implant, an engineered tissue, and/or other suitable items.Further, mesh system 124 may be used with plasma deposition unit 110 ineither a form of atmospheric plasma deposition unit 118 or vacuum plasmadeposition unit 120.

The illustration of manufacturing environment 100 in FIG. 1 is not meantto imply physical or architectural limitations to the manner in which anadvantageous embodiment may be implemented. Other components in additionto or in place of the ones illustrated may be used. Some components maybe unnecessary. Also, the blocks are presented to illustrate somefunctional components. One or more of these blocks may be combined,divided, or combined and divided into different blocks when implementedin an advantageous embodiment.

For example, additional plasma deposition systems may be present inaddition to plasma deposition system 102. Further, other processingequipment also may be present in manufacturing environment 100. Asanother example, rather than forming layer 123 by itself, number ofmaterials 104 may be deposited as a multi-layered stack of materials.Further, a mesh in number of meshes 138 may be comprised of more thanone type of material.

In still another illustrative example, controller 116 may take the formof circuits that control the operation of plasma deposition unit 110.For example, controller 116 may be implemented using anapplication-specific integrated circuit (ASIC).

Turning next to FIG. 2, an illustration of a plasma deposition system isdepicted in accordance with an advantageous embodiment. Plasmadeposition system 200 is an example of a physical implementation forplasma deposition system 102 in FIG. 1.

As depicted, plasma deposition system 200 comprises plasma depositionunit 202, movement system 204, material supply system 206, controller208, laser cutter 210, and frame 212. In these illustrative examples,plasma deposition unit 202, movement system 204, material supply system206, controller 208, and laser cutter 210 may be associated with frame212.

When one component is “associated” with another component, theassociation is a physical association in these depicted examples. Forexample, a first component, plasma deposition unit 202, may beconsidered to be associated with a second component, frame 212, by beingsecured to the second component, bonded to the second component, mountedto the second component, welded to the second component, fastened to thesecond component, and/or connected to the second component in some othersuitable manner. The first component also may be connected to the secondcomponent using a third component. The first component may also beconsidered to be associated with the second component by being formed aspart of and/or an extension of the second component.

Plasma deposition unit 202 may be configured to generate plasma 214. Inthis illustrative example, plasma 214 may flow from number of nozzles216 in plasma deposition unit 202. As illustrated, number of nozzles 216may comprise nozzle 218, nozzle 220, and nozzle 222. Plasma 214 may flowfrom nozzle 218, nozzle 220, and nozzle 222 as plasma flow 224, plasmaflow 226, and plasma flow 228, respectively.

In this illustrative example, movement system 204 may comprise motor 230and roller 232. Motor 230 may rotate roller 232 such that substrate 234moves in the direction of arrow 236. In this illustrative example,substrate 234 may take the form of flexible substrate 238. In theseillustrative examples, number of meshes 248 in material supply system206 may be associated with number of nozzles 216. As depicted, mesh 250,mesh 252, and mesh 254 in number of meshes 248 may be associated withnozzle 218, nozzle 220, and nozzle 222, respectively. As a result,plasma 214 in plasma flow 224, plasma flow 226, and plasma flow 228 mayflow through mesh 250, mesh 252, and mesh 254, respectively. Flexiblesubstrate 238 may be stored on roller 240 on movement system 204.

As depicted, substrate 234 may move in the direction of arrow 236 pastnumber of nozzles 216 in plasma deposition unit 202. Substrate 234 maymove in the direction of arrow 236, while plasma deposition unit 202 maybe fixed.

As substrate 234 moves in the direction of arrow 236, laser cutter 210may cut substrate 234 into units 242. Units 242 may take various forms.For example, without limitation, a unit in units 242 may be a display, asolar cell unit, an integrated circuit system, or some other suitabletype of unit.

Turning next to FIG. 3, an illustration of a plasma deposition system isdepicted in accordance with an advantageous embodiment. Plasmadeposition system 300 is another example of an implementation for plasmadeposition system 102 in FIG. 1.

In this example, plasma deposition system 300 may comprise plasmadeposition unit 302, movement system 304, material supply system 306,controller 308, and frame 310. Plasma deposition unit 302, movementsystem 304, material supply system 306, and controller 308 may beassociated with frame 310.

As illustrated, plasma deposition unit 302 may generate plasma 312.Plasma 312 may be generated by number of nozzles 314 in plasmadeposition unit 302. In this illustrative example, plasma flow 322,plasma flow 324, and plasma flow 326 may form plasma 312. In theseillustrative examples, plasma 312 may flow through nozzle 316, nozzle318, and nozzle 320 in the form of plasma flow 322, plasma flow 324, andplasma flow 326, respectively.

As depicted, number of meshes 348 in material supply system 306 may beassociated with number of nozzles 314. Each mesh in number of meshes 348may be associated with a nozzle in number of nozzles 314. In otherwords, each nozzle in number of nozzles 314 may have a different meshfrom number of meshes 348. For example, without limitation, mesh 350,mesh 352, and mesh 354 in number of meshes 348 may be associated withnozzle 316, nozzle 318, and nozzle 320, respectively.

As a result, plasma 312 in plasma flow 322, plasma flow 324, and plasmaflow 326 may flow through mesh 350, mesh 352, and mesh 354,respectively.

Substrate 328 may be moved by movement system 304, which may take theform of roll to roll system 330 in this illustrative example. Movementsystem 304 may comprise roller 332, roller 334, and motor 336. Motor 336may be configured to rotate roller 334 such that substrate 328 moves inthe direction of arrow 338. In this illustrative example, substrate 328may be flexible substrate 340 in which flexible substrate 340 mayoriginate from roller 332 and may be received at roller 334.

Turning next to FIG. 4, another illustration of a plasma depositionsystem is depicted in accordance with an advantageous embodiment. Inthis illustrative example, plasma deposition system 400 may be anexample of another implementation for plasma deposition system 102 inFIG. 1.

As illustrated, plasma deposition system 400 may comprise plasmadeposition unit 402, movement system 404, material supply system 406,controller 408, and frame 410.

Plasma deposition unit 402, movement system 404, material supply system406, and controller 408 may be associated with frame 410.

Plasma deposition unit 402 may be configured to generate plasma 412.Plasma 412 may be generated by number of nozzles 414. In particular,number of nozzles 414 may comprise nozzle 416, nozzle 418, and nozzle420. Nozzle 416 may generate plasma flow 422, nozzle 418 may generateplasma flow 424, and nozzle 420 may generate plasma flow 426.

As depicted, number of meshes 448 in material supply system 406 may beassociated with number of nozzles 414. As depicted, mesh 450, mesh 452,and mesh 454 in number of meshes 448 may be associated with nozzle 416,nozzle 418, and nozzle 420, respectively. As a result, plasma 412 inplasma flow 422, plasma flow 424, and plasma flow 426 may flow throughmesh 450, mesh 452, and mesh 454, respectively.

In this illustrative example, movement system 404 may comprise roller428, roller 430, belt 432, and motor 434. Belt 432 may move in responseto motor 434 turning roller 430. Movement of belt 432 may causesubstrates 436, 438, 440, and 442 to move in the direction of arrow 444when these substrates are located on surface 446 of belt 432. In thisdepicted example, robotic arm 456 and robotic arm 457 may movesubstrates on and off of belt 432 along surface 446 of belt 432 duringprocessing. Robotic arm 456 may place substrate 436 on surface 446 ofbelt 432. In this manner, a number of materials (not shown) in plasma412 may be deposited onto substrate 436. After processing, robotic arm457 may remove a substrate, such as substrate 442, from surface 446 ofbelt 432 for other processing. In some illustrative examples, roboticarm 456 and robotic arm 457 may be considered part of movement system404 rather than separate components.

Additionally, plasma deposition system 400 also may include plasmadeposition unit 460. Plasma deposition unit 460 may have number ofnozzles 462. In particular, plasma deposition unit 460 may have nozzle464 and nozzle 466 in these depicted examples.

As another illustrative example, number of meshes 480 in material supplysystem 406 may be a single mesh. Different materials may be present indifferent areas with respect to locations for number of nozzles 462. Inthis illustrative example, number of meshes 480 may take the form ofmesh 482. Mesh 482 may be associated with both nozzle 464 and nozzle466. As depicted, mesh 482 may have material 486 in section 488 of mesh482. Material 490 may be present in section 492 of mesh 482. Section 488may be positioned relative to nozzle 464 and section 492 may bepositioned relative to nozzle 466.

This configuration is in contrast to using a single mesh for eachnozzle. Of course, in some illustrative examples, mesh 482 may have onlymaterial 486. Further, the concentration of material 486 may bedifferent in section 488 and in section 492.

In yet another illustrative example, both material 486 and material 490may be present in section 488. With this configuration, plasma 468 mayflow as plasma flow 470 from nozzle 464 through section 488 of mesh 482.Plasma 468 in plasma flow 470 may carry material 486, material 490,and/or any other material in section 492 of mesh 482 for deposition ontosubstrate 440.

If both material 486 and material 490 may be present in section 492,plasma 468 may flow as plasma flow 472 through section 492 of mesh 482,and plasma 468 in plasma flow 472 may carry material 486, material 490,and/or any other material in section 492 of mesh 482 for deposition ontosubstrate 440.

In this illustrative example, plasma deposition unit 460 may be movablewith respect to substrates, such as substrate 440. In this illustrativeexample, plasma deposition unit 460 may be movable along number ofdifferent axes 471.

In these illustrative examples, positioning system 473 may be configuredto move plasma deposition unit 460. Positioning system 473 may berobotic arm 474 in this illustrative example. Of course, any positioningsystem may be used that provides a desired movement for plasmadeposition unit 460.

With the ability for plasma deposition unit 460 to move about a numberof axes, plasma deposition unit 460 may be positioned to provide desireddeposition of materials. This type of movement may be useful whensubstrate 440 is non-planar. Plasma deposition unit 460 may followcontour 478 on substrate 440.

Turning next to FIG. 5, an illustration of a nozzle with a mesh isdepicted in accordance with an advantageous embodiment. In thisillustrative example, nozzle 500 may be an example of an implementationfor a nozzle within number of nozzles 128 in FIG. 1. Mesh 502 may be anexample of an implementation for a mesh within number of meshes 138 formaterial supply system 114 in FIG. 1.

In this illustrative example, mesh 502 may be positioned relative toopenings 504 in nozzle 500 by bracket system 506. In this manner, mesh502 may be positioned between nozzle 500 and substrate 508.

As depicted, mesh 502 may be comprised of material 510. As a result,when plasma 512 flows from nozzle 500 through mesh 502, portion 511 ofmaterial 510 may be carried in plasma 512. Portion 511 of material 510carried in plasma 512 may be deposited onto surface 514 of substrate508. In this manner, layer 516 of material 510 may be formed on surface514 of substrate 508.

In these illustrative examples, portion 511 of material 510 may be atomsfrom material 510 carried in plasma 512. Plasma 512 may be plasma flow518.

In addition to material 510 from mesh 502, material 520 may beintroduced through inlet 522 and introduced into plasma 512 in interior550 of nozzle 500 as plasma 512 flows towards openings 504 in thepartially exposed view of nozzle 500. As a result, portion 521 ofmaterial 520 may be carried in plasma 512.

In this manner, both material 510 and material 520 may be present inportion 511 of material 510 and in portion 521 of material 520,respectively, carried in plasma 512, depending on the particularimplementation. In this illustrative example, material 520 may take theform of a liquid, gas, or some other suitable fluid. In still otherillustrative examples, material 520 may take the form of a solid, suchas a powder.

As depicted, mesh 502 may comprise structure 530 with material 510 onstructure 530. Material 510 may be deposited, coated, or otherwiseassociated with structure 530. Structure 530 may be comprised of anymaterial configured to be associated with material 510. For example,without limitation, structure 530 may be comprised of steel, titanium,aluminum, and/or any other suitable material. In some illustrativeexamples, structure 530 may be comprised of material 510.

In these illustrative examples, the use of mesh 502 may provide bettercontrol of the deposition of material 510 from mesh 502 than thedeposition of material 520 as a gas, liquid, and/or other fluid.Further, the use of material 510 from mesh 502 may be moreenvironmentally friendly as compared to using material 520 in the formof a powder.

Turning now to FIGS. 6-9, illustrations of different types of meshes aredepicted in accordance with an advantageous embodiment. Turning first toFIG. 6, mesh 600 may have a zigzag pattern. Next, in FIG. 7, mesh 700may have a rectangular pattern. In FIG. 8, mesh 800 may have a circularpattern. Next, in FIG. 9, mesh 900 may have a fractal pattern.

The illustrations of the different patterns of the different types ofmeshes are only provided for purposes of illustrating some examples ofhow a mesh may be implemented. Of course, other patterns or differenttypes of meshes may be implemented based on the particularimplementation.

The illustration of plasma deposition systems and components for thesystems in FIGS. 2-9 may be combined with components in FIG. 1, usedwith components in FIG. 1, or a combination of the two. Additionally,some of the components in FIGS. 2-9 may be illustrative examples of howcomponents shown in block form in FIG. 1 may be implemented as physicalstructures.

Turning next to FIG. 10, an illustration of a flowchart of a process fordepositing a number of materials on a substrate is depicted inaccordance with an advantageous embodiment. The process illustrated inFIG. 10 may be implemented in manufacturing environment 100 in FIG. 1.In particular, the process may be implemented using plasma depositionsystem 102 in FIG. 1.

The process may begin by generating plasma 122 (operation 1000). Theprocess may direct plasma 122 from plasma deposition unit 110 throughmesh system 124 located between substrate 108 and plasma deposition unit110 (operation 1002). The process may then cause number of materials 104from mesh system 124 to be carried by plasma 122 (operation 1004). Inthis illustrative example, number of materials 104 may be from mesh 502in FIG. 5.

Next, the process may deposit the portion of number of materials 104 onsurface 106 of substrate 108 in response to plasma 122 flowing towardsubstrate 108 (operation 1006). The process may move substrate 108relative to plasma 122 from plasma deposition unit 110 (operation 1008).The process may then return to operation 1000.

This process may be repeated any number of times until layer 123 ofnumber of materials 104 has been deposited onto substrate 108.

Turning next to FIG. 11, an illustration of a flowchart of a process forselecting meshes for a mesh system is depicted in accordance with anadvantageous embodiment. The process illustrated in FIG. 11 may beimplemented in manufacturing environment 100 in FIG. 1. In particular,this process may be used to select type of material 152 of number oftypes of meshes 148 in number of meshes 138 for use in mesh system 124when depositing number of materials 104 onto substrate 108.

The process may begin by identifying desired configuration 168 fordepositing number of materials 104 on substrate 108 (operation 1100).The process may select a type of mesh for number of meshes 138 tocorrespond to desired configuration 168 for number of materials 104(operation 1102). Next, the selected type of mesh may be associated withnumber of nozzles 128 (operation 1104). The type of mesh may be at leastone of type of material 152 and mesh pattern 150. The association ofnumber of meshes 138 with number of nozzles 128 may occur such that theappropriate mesh is placed in front of a nozzle in the location desiredfor that material in number of materials 104 when deposited ontosubstrate 108. The process may terminate thereafter. In this manner,plasma deposition unit 110 may then deposit number of materials 104 withthe desired configuration.

The flowcharts and block diagrams in the different depicted embodimentsillustrate the architecture, functionality, and operation of somepossible implementations of apparatus and methods in an advantageousembodiment. In this regard, each block in the flowcharts or blockdiagrams may represent a module, segment, function, and/or a portion ofan operation or step. For example, one or more of the blocks may beimplemented as program code, in hardware, or a combination of theprogram code and hardware. When implemented in hardware, the hardwaremay, for example, take the form of integrated circuits that aremanufactured or configured to perform one or more operations in theflowcharts or block diagrams.

In some alternative implementations of an advantageous embodiment, thefunction or functions noted in the blocks may occur out of the ordernoted in the figures. For example, in some cases, two blocks shown insuccession may be executed substantially concurrently, or the blocks maysometimes be performed in the reverse order, depending upon thefunctionality involved. Also, other blocks may be added in addition tothe illustrated blocks in a flowchart or block diagram.

With reference now to FIG. 12, an illustration of a flowchart of aprocess for forming a mesh is depicted in accordance with anadvantageous embodiment. In this illustrative example, number of meshes138 may be manufactured for use in plasma deposition system 102 in FIG.1.

The process may begin by heating material 510 from number of materials104 to form a liquid form of material 510 (operation 1200). Next, theprocess may dip structure 530 in the liquid form of material 510 suchthat material 510 coats structure 530 (operation 1202). In theseillustrative examples, structure 530 may be comprised of any materialthat may have a higher melting point than material 510 melted to coatstructure 530.

Structure 530 may be removed from the liquid form of material 510(operation 1204). Thereafter, structure 530 with material 510 coated onstructure 530 may be cooled (operation 1206), with the processterminating thereafter.

Turning next to FIG. 13, an illustration of a substrate with a gradientis depicted in accordance with an advantageous embodiment. In thisillustrative example, substrate 1300 is shown from a top view. Substrate1300 may be an example of an implementation for substrate 108 in FIG. 1.As depicted, material 1302 from mesh system 124 (not shown) may havebeen deposited onto substrate 1200 in the form of a gradient in which anamount of material 1302 varies. In other words, a variable concentrationof a material may be deposited in material 1302 onto substrate 1300.

Turning now to FIG. 14, an illustration of a substrate with sections ofmaterials is depicted in accordance with an advantageous embodiment. Inthis illustrative example, substrate 1400 is also shown from a top view.Substrate 1400 may have sections 1402 of materials 1404 from mesh system124 (not shown) deposited onto substrate 1400. Different types and/oramounts of materials may be present in different sections in sections1402.

In this manner, increased control in the manner in which materials aredeposited onto a substrate may occur using plasma deposition system 102in FIG. 1. In particular, by selecting type of material 152 for numberof meshes 138, plasma deposition system 102 may provide desiredconfiguration 168 for number of materials 104 when deposited ontosubstrate 108 in FIG. 1.

Advantageous embodiments of the present disclosure may be described inthe context of aircraft manufacturing and service method 1500 as shownin FIG. 15 and aircraft 1600 as shown in FIG. 16. Turning first to FIG.15, an illustration of an aircraft manufacturing and service method isdepicted in accordance with an advantageous embodiment. Duringpre-production, aircraft manufacturing and service method 1500 mayinclude specification and design 1502 of aircraft 1600 in FIG. 16 andmaterial procurement 1504.

During production, component and subassembly manufacturing 1506 andsystem integration 1508 of aircraft 1600 in FIG. 16 may take place.Thereafter, aircraft 1600 may go through certification and delivery 1510in order to be placed in service 1512. While in service 1512 by acustomer, aircraft 1600 may be scheduled for routine maintenance andservice 1514, which may include modification, reconfiguration,refurbishment, and other maintenance or service.

Each of the processes of aircraft manufacturing and service method 1500may be performed or carried out by a system integrator, a third party,and/or an operator. In these examples, the operator may be a customer.For the purposes of this description, a system integrator may include,without limitation, any number of aircraft manufacturers andmajor-system subcontractors; a third party may include, withoutlimitation, any number of vendors, subcontractors, and suppliers; and anoperator may be an airline, a leasing company, a military entity, aservice organization, and so on.

With reference now to FIG. 16, an illustration of an aircraft isdepicted in which an advantageous embodiment may be implemented. In thisexample, aircraft 1600 may be produced by aircraft manufacturing andservice method 1500 in FIG. 15 and may include airframe 1602 withplurality of systems 1604 and interior 1606. Examples of systems 1604may include one or more of propulsion system 1608, electrical system1610, hydraulic system 1612, and environmental system 1614. Any numberof other systems may be included. Plasma deposition using plasmadeposition system 102 in FIG. 1 may be used to form devices and partsfor any one of systems 1604, including one or more of propulsion system1608, electrical system 1610, hydraulic system 1612, and environmentalsystem 1614. These devices and parts may include integrated circuits,displays, and other devices that may be in systems 1604.

Although an aerospace example is shown, different advantageousembodiments may be applied to other industries. These other industriesmay include, for example, without limitation, the automotive industry,display industry, solar cell industry, semiconductor industry,biomedical device industry, biomedical implant industry, sensorindustry, and other suitable industries.

Apparatuses and methods embodied herein may be employed during at leastone of the stages of aircraft manufacturing and service method 1500 inFIG. 15. In one illustrative example, components or subassembliesproduced in component and subassembly manufacturing 1506 in FIG. 15 maybe fabricated or manufactured in a manner similar to components orsubassemblies produced while aircraft 1600 is in service 1512 in FIG.15. The components and subassemblies may be manufactured using anadvantageous embodiment. In one example, at least one of electroniccircuits, displays, and other devices may be manufactured using anadvantageous embodiment. This manufacturing may occur during, forexample, without limitation, component and subassembly manufacturing1506 in which plasma deposition occurs using plasma deposition system102 in FIG. 1.

As yet another example, one or more apparatus embodiments and/or methodembodiments for plasma deposition using plasma deposition system 102 inFIG. 1 may be utilized during production stages, such as component andsubassembly manufacturing 1506 and system integration 1508 in FIG. 15.One or more apparatus embodiments, method embodiments, or a combinationthereof may be utilized during maintenance and service 1514 in FIG. 15.For example, at least one of electronic circuits, displays, and otherdevices may be manufactured using plasma deposition through plasmadeposition system 102 during maintenance and service 1514. The use of anumber of the different advantageous embodiments may substantiallyexpedite the assembly of and/or reduce the cost of aircraft 1600.

With one or more advantageous embodiments, plasma desorption, plasmaactivation, and plasma deposition may be implemented by one simpledevice. The same plasma unit employed in this process may also be usedfor the activation or treatment of the surface prior, during, and afterthe film deposition. With an advantageous embodiment, gradients,sections of material, or both may be formed on substrates. Additionally,an advantageous embodiment may provide an ability to form multi-layeredstructures in a desired manner.

The description of the different advantageous embodiments has beenpresented for purposes of illustration and description and is notintended to be exhaustive or limited to the embodiments in the formdisclosed. Many modifications and variations may be apparent to those ofordinary skill in the art. For example, plasma deposition system 102 maybe used to apply paint to a substrate. For example, resin materials andpolymers for paint may be used for materials on the meshes.

Further, different advantageous embodiments may provide differentadvantages as compared to other advantageous embodiments. The embodimentor embodiments selected are chosen and described in order to bestexplain the principles of the embodiments, the practical application,and to enable others of ordinary skill in the art to understand thedisclosure for various embodiments with various modifications as aresuited to the particular use contemplated.

What is claimed is:
 1. An apparatus comprising: a plasma deposition unitconfigured to generate a plasma; a movement system configured to move asubstrate under the plasma deposition unit; and a mesh system locatedbetween the plasma deposition unit and the substrate in which a meshcomprises a number of materials for deposition onto the substrate and inwhich the plasma passing through the mesh causes a portion of the numberof materials from the mesh to be deposited onto the substrate.
 2. Theapparatus of claim 1 further comprising: a controller configured tocontrol operation of the plasma deposition unit and the movement system.3. The apparatus of claim 1, wherein the number of materials comprises aplurality of types of materials in which each of the plurality of thetypes of materials is deposited onto a number of areas in a plurality ofthe areas on the substrate.
 4. The apparatus of claim 1, wherein themesh system is configured to cause deposition of the number of materialson the substrate with a configuration selected from one of sections anda gradient in which an amount of a material in the number of materialsdeposited varies.
 5. The apparatus of claim 1, wherein the plasmadeposition unit comprises a number of nozzles, and the mesh systemcomprises a number of meshes associated with the number of nozzles inwhich each mesh in the number of meshes is associated with a nozzle inthe number of nozzles.
 6. The apparatus of claim 5, wherein the numberof meshes is comprised of a number of types of meshes, wherein a type ofmesh in the number of types of meshes is selected from at least one of amesh pattern and a type of material.
 7. The apparatus of claim 1 furthercomprising: a source selected to supply a second number of materials. 8.The apparatus of claim 7, wherein the second number of materials isselected from at least one of a liquid, a gas, and a powder.
 9. Theapparatus of claim 1 further comprising: a positioning system configuredto move the plasma deposition unit about a number of axes.
 10. Theapparatus of claim 1, wherein the number of materials is selected fromat least one of conductive polymers, non-conductive polymers,semi-conductive polymers, metals, metal alloys, dielectrics, carbon,graphites, oxides, aluminum, aluminum oxide, zinc oxide, aluminumcopper, aluminum-doped zinc oxide, gallium doped zinc oxide, paint, andhighly-oriented pyrolytic graphite.
 11. The apparatus of claim 1,wherein the plasma deposition unit is selected from one of a vacuumplasma deposition unit and an atmospheric plasma deposition unit. 12.The apparatus of claim 1, wherein the substrate comprises: a flexiblesubstrate.
 13. The apparatus of claim 1, wherein the substratecomprises: an inflexible substrate.
 14. The apparatus of claim 2,wherein the controller is configured to control deposition of the numberof materials onto the substrate as a part of a process to form a deviceselected from one of an organic light-emitting diode display, anintegrated circuit, a processor, a display device, a sensor, a solarcell, a window, a windshield, a medical device, a biomedical implant,and an engineered tissue.
 15. The apparatus of claim 2, wherein thecontroller is configured to control a number of parameters fordepositing the number of materials onto the substrate.
 16. The apparatusof claim 15, wherein the number of parameters comprises at least one ofan amount of the number of materials, a type of material for the numberof materials, a pattern of the number of materials, and an area in whichthe number of materials is deposited onto a surface of the substrate.17. A method for depositing materials, the method comprising: directinga plasma from a plasma deposition unit through a mesh system locatedbetween the plasma deposition unit and a substrate in which a mesh iscomprised of a number of materials and the plasma causes a portion ofthe number of materials from the mesh to be deposited onto thesubstrate; and moving the substrate relative to the plasma, while thenumber of materials is deposited onto the substrate.
 18. The method ofclaim 17 further comprising: selecting a number of meshes for the meshsystem based on a desired configuration for the number of materials tobe deposited onto the substrate.
 19. The method of claim 17, wherein thenumber of materials comprises a plurality of types of materials in whicheach plurality of the types of materials is configured to be depositedonto a number of areas in a plurality of the areas on the substrate. 20.The method of claim 17, wherein the plasma deposition unit comprises anumber of nozzles, the mesh system comprises a number of meshes, and thenumber of meshes is associated with the number of nozzles.
 21. Themethod of claim 20, wherein the number of meshes is comprised of anumber of types of meshes, wherein a type of mesh in the number of typesof meshes is selected from at least one of a mesh pattern and a type ofmaterial.
 22. The method of claim 17, wherein the number of materials isa first number of materials and further comprising: introducing a secondnumber of materials into the plasma.
 23. The method of claim 22, whereinthe second number of materials is selected from at least one of aliquid, a gas, and a powder.
 24. The method claim 17, wherein the numberof materials is selected from at least one of conductive polymers,non-conductive polymers, semi-conductive polymers, metals, metal alloys,dielectrics, carbon, graphites, oxides, aluminum, aluminum oxide, zincoxide, aluminum copper, aluminum doped zinc oxide, gallium doped zincoxide, paint, and highly-oriented pyrolytic graphite.
 25. The method ofclaim 17, wherein the plasma deposition unit is selected from one of avacuum plasma deposition unit and an atmospheric plasma deposition unit.26. The method of claim 17, wherein the substrate comprises a flexiblesubstrate configured to be stored on a roller.
 27. The method of claim17, wherein the substrate comprises a semiconductor wafer.
 28. Anatmospheric plasma deposition system comprising: a plasma depositionunit having a number of nozzles configured to generate a plasma; amovement system configured to move a substrate under the plasmadeposition unit in which the substrate is selected from one of aflexible substrate and an inflexible substrate; a mesh system having anumber of meshes located between the plasma deposition unit and thesubstrate in which a mesh in the number of meshes is associated with thenumber of nozzles; in which the number of meshes comprises a number ofmaterials for deposition onto the substrate; in which the plasma passingthrough the mesh causes a portion of the number of materials from themesh to be deposited onto the substrate; in which the number ofmaterials is deposited in a configuration selected from sections and agradient in which an amount of a material in the number of materialsdeposited varies; and in which the number of materials is selected fromat least one of conductive polymers, non-conductive polymers,semi-conductive polymers, metals, metal alloys, dielectrics, carbon,graphites, oxides, aluminum, aluminum oxide, zinc oxide, aluminumcopper, aluminum doped zinc oxide, gallium doped zinc oxide, paint, andhighly-oriented pyrolytic graphite; and a controller configured tocontrol operation of the plasma deposition unit, the movement system,and a number of parameters for depositing the number of materials ontothe substrate in which the number of parameters comprises at least oneof an amount of the number of materials, a type of material for thenumber of materials, a pattern of the number of materials, and an areain which the number of materials is deposited onto a surface of thesubstrate.
 29. A method for plasma deposition of materials on asubstrate, the method comprising: selecting a number of meshes for amesh system for a number of nozzles in a plasma deposition unit based ona desired configuration for a number of materials to be deposited ontothe substrate in which the number of materials is selected from at leastone of conductive polymers, non-conductive polymers, semi-conductivepolymers, metals, metal alloys, dielectrics, carbon, graphites, oxides,aluminum, aluminum oxide, zinc oxide, aluminum copper, aluminum dopedzinc oxide, gallium doped zinc oxide, paint, and highly-orientedpyrolytic graphite; and in which the substrate is selected from one of aflexible substrate and an inflexible substrate; directing a plasma fromthe number of nozzles in the plasma deposition unit through the numberof meshes in the mesh system in which the number of meshes is locatedbetween the plasma deposition unit and the substrate in which a mesh iscomprised of the number of materials and the plasma causes a portion ofthe number of materials from the mesh to be deposited onto thesubstrate; and moving the substrate relative to the plasma while thenumber of materials is deposited onto the substrate.
 30. The method ofclaim 29, wherein the number of materials is a first number of materialsand further comprising: introducing a second number of materials intothe plasma selected from at least one of a liquid, a gas, and a powder.